rs3a thru rs3k vishay general semiconductor document number: 88709 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount fast switching rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? fast switching for high efficiency ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in fast switching re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 50 v to 800 v i fsm 100 a t rr 150 ns, 250 ns, 500 ns v f 1.3 v t j max. 150 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol rs3a rs3b rs3d RS3G rs3j rs3k unit device marking code ra rb rd rg rj rk maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 v maximum rms voltage v rms 35 70 140 280 420 500 v maximum dc blocking voltage v dc 50 100 200 400 600 800 v maximum average forward rectified current at t l = 75 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
rs3a thru rs3k vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88709 revision: 11-apr-08 2 note: (1) thermal resistance from junction to ambi ent and from junction to lead mounted on p.c.b. with 0.3 x 0.3" (8.0 x 8.0 mm) copp er pad area note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol rs3a rs3b rs3d RS3G rs3j rs3k unit maximum instantaneous forward voltage 2.5 a v f 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 10 250 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 500 ns typical junction capacitance 4.0 v, 1 mhz c j 44 34 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol rs3a rs3b rs3d RS3G rs3j rs3k unit typical thermal resistance (1) r ja r jl 50 15 c/w ordering information (example) preferred p/n unit weight (g) reffered package code base quantity delivery mode rs3j-e3/57t 0.211 57t 850 7" diameter plastic tape and reel rs3j-e3/9at 0.211 9at 3500 13" diameter plastic tape and reel rs3jhe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel rs3jhe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel figure 1. forward current derating curve lead temperat u re (c) a v erage for w ard rectified c u rrent (a) 75 150 0 25 50 100 125 0 0.5 2.5 1.5 resisti v e or ind u cti v e load p.c.b. mo u nted 0.3 x 0.3" ( 8 .0 x 8 .0 mm) copper pad areas 2.0 1.0 3.0 figure 2. maximum non-repetitive peak forward surge current 0 125 150 25 50 75 100 1 100 10 peak for w ard s u rge c u rrent /a) nu m b er of cycles at 60 hz t l = 75 c 8 .3 ms single half sine- w a v e
rs3a thru rs3k vishay general semiconductor document number: 88709 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 1. 8 2.0 0.4 0.6 0. 8 1.0 1.2 1.4 1 10 100 0.1 p u lse w idth = 300 s 1 % d u ty cycle t j = 25 c 1.6 t j = 125 c t j = - 40 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) 0204060 8 0 100 instantaneo u s re v erse c u rrent ( a) 100 10 1 0.1 0.01 t j = 75 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance rs3a to RS3G rs3j to rs3k 100 10 1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) 0.01 0.1 1 10 100 0.1 1 10 100 mo u nted on 0.20 x 0.27" (5 x 7 mm) copper pad areas transient thermal impedance (c/ w ) t - p u lse d u ration (s) cathode band do-214ab (smc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.2 8 0 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.320 ( 8 .13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) mi n . 0.060 (1.52) mi n . 0.1 8 5 (4.69) max. 0.320 ref.
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